Proceedings of the 22nd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2011)LABAT, N; MARC, F.Microelectronics and reliability. 2011, Vol 51, Num 9-11, issn 0026-2714, 603 p.Conference Proceedings

A study of SiC Power BJT performance and robustnessCASTELLAZZI, A; TAKUNO, T; ONISHI, R et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1773-1777, issn 0026-2714, 5 p.Conference Paper

Control of the electromagnetic compatibility: An issue for IC reliabilityGROS, Jean-Baptiste; DUCHAMP, Genevieve; LEVANT, Jean-Luc et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1493-1497, issn 0026-2714, 5 p.Conference Paper

Cu pumping in TSVs: Effect of pre-CMP thermal budgetDE WOLF, I; CROES, K; VARELA PEDREIRA, O et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1856-1859, issn 0026-2714, 4 p.Conference Paper

ESD sensitivity of a GaAs MMIC microwave power amplifierTAZZOLI, Augusto; ROSSETTO, Isabella; ZANONI, Enrico et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1602-1607, issn 0026-2714, 6 p.Conference Paper

Effects of device layout on the drain breakdown voltages in MuGFETsJIN YOUNG KIM; CHONG GUN YU; JONG TAE PARK et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1547-1550, issn 0026-2714, 4 p.Conference Paper

Progressive module redundancy for fault-tolerant designs in nanoelectronicsBAN, Tian; NAVINER, Lirida.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1489-1492, issn 0026-2714, 4 p.Conference Paper

Warpage analysis of layered structures connected by direct brazingASADA, T; YAGI, Y; USUI, M et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1836-1839, issn 0026-2714, 4 p.Conference Paper

Characterization and modelling of single event transients in LDMOS-SOI FETsALVARADO, J; KILCHYTSKA, V; BOUFOUSS, E et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 2004-2009, issn 0026-2714, 6 p.Conference Paper

Comprehensive nanostructural study of SSRM nanocontact on siliconDELAROQUE, T; DOMENGES, B; COLDER, A et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1693-1696, issn 0026-2714, 4 p.Conference Paper

Design considerations and strategies for high-reliable STT-MRAMZHAO, W. S; DEVOLDER, T; LAKYS, Y et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1454-1458, issn 0026-2714, 5 p.Conference Paper

Dynamic active cooling for improved power system reliabilityCASTELLAZZI, A; CHOY, W. J; ZANCHETTA, P et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1964-1967, issn 0026-2714, 4 p.Conference Paper

Foundry workflow for dynamic-EFA-based yield rampKARDACH, C; KAPILEVICH, I; BLOCK, J et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1668-1672, issn 0026-2714, 5 p.Conference Paper

Thermal impedance spectroscopy of power modulesHENSLER, A; WINGERT, D; HEROLD, Ch et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1679-1683, issn 0026-2714, 5 p.Conference Paper

Dynamic electro-thermal modeling for power device assembliesCOVA, P; BERNARDONI, M; DELMONTE, N et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1948-1953, issn 0026-2714, 6 p.Conference Paper

Failure mechanisms in advanced BCD technology during reliability qualificationVAN HASSEL, J. G; BOCK, G. A. D; VAN DEN BERG, G et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1697-1700, issn 0026-2714, 4 p.Conference Paper

Positive bias temperature instabilities on sub-nanometer EOT FinFETsFEIJOO, P. C; CHO, M; TOGO, M et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1521-1524, issn 0026-2714, 4 p.Conference Paper

Reliability issues of GaN based high voltage power devicesWUERFL, J; BAHAT-TREIDEL, E; SINGWALD, S et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1710-1716, issn 0026-2714, 7 p.Conference Paper

Analysis of critical-length data from Electromigration failure studiesDWYER, V. M.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1568-1572, issn 0026-2714, 5 p.Conference Paper

Dynamic defect localization using FPGA to monitor digital valuesSAURY, L; CANY, S.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1701-1704, issn 0026-2714, 4 p.Conference Paper

Impact of irregular geometries on low-k dielectric breakdownBASHIR, Muhammad; MILOR, Linda; DAE HYUN KIM et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1582-1586, issn 0026-2714, 5 p.Conference Paper

Statistical modeling of reliability in logic devicesSCHLEIFER, Jochen; COENEN, Thomas; NOLL, Tobias G et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1469-1473, issn 0026-2714, 5 p.Conference Paper

Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTsZERARKA, M; AUSTIN, P; BAFLEUR, M et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1990-1994, issn 0026-2714, 5 p.Conference Paper

GaN-based HEMTs tested under high temperature storage testMARCON, D; KANG, X; VIAENE, J et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1717-1720, issn 0026-2714, 4 p.Conference Paper

Identifying electrical mechanisms responsible for functional failures during harsh external ESD and EMC aggressionBESSE, P; ABOUDA, K; ABOUDA, C et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1597-1601, issn 0026-2714, 5 p.Conference Paper